Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation

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dc.contributor.authorArbia, Marwa Ben
dc.contributor.authorDemir, İlkay
dc.contributor.authorKaur, Navpreet
dc.contributor.authorSaidi, Faouzi
dc.contributor.authorZappa, Dario
dc.contributor.authorComini, Elisabetta
dc.contributor.authorAltuntaş, İsmail
dc.contributor.authorMaaref, Hassen
dc.date.accessioned2024-03-05T10:31:02Z
dc.date.available2024-03-05T10:31:02Z
dc.date.issued15.01.2023tr
dc.departmentEğitim Bilimleri Enstitüsütr
dc.description.abstractHyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural dependences of localization phenomenon by X-ray diffraction (XRD), scanning electron microscopy-energy dispersive X-ray (SEM-EDX), Raman, ultraviolet–visible (UV–vis), and photoluminescence (PL) techniques. Using metal-organic vapor phase epitaxy (MOVPE), we succeed to grow the InGaAs directly on InP substrate at 560 ◦C as an active layer with indium concentration exceeding the “golden” value (53%) to enlarge its cutoff absorption wavelength. X-ray diffraction proved a good crystallinity of the heterostructure with a sharp peak related to the thick substrate and another peak attributed to the thin layer of InGaAs. Moreover, an interfacial layer appeared at the logarithmic scale of XRD patterns and was confirmed by Raman analysis. The SEM-EDX revealed an average indium concentration (62%), almost the growth concentration. However, a cross-section compositional profile over the heterostructure showed an inhomogeneous distribution of the indium. This is predictable from the composition fluctuation in the indium-containing alloys and the volatility (surface segregation) of As (In). On the other side, the optical investigation of InGaAs demonstrated an anomalous behavior of luminescence versus temperature, manifested by the S-shape feature. This trend stems from the potential fluctuation induced by the non-uniform distribution of indium. A numerical simulation was developed based on the localized state ensemble (LSE) model to well-reproduce this anomaly by giving the best fitting parameters and comparing them with those calculated using the semi-empirical models (Vi˜na and P¨assler). The results reported here will help in optimizing the epitaxy design of future InGaAs/InP and further studying its surface morphology and device performance.tr
dc.identifier.scopus2-s2.0-85139397714en_US
dc.identifier.scopusqualityN/A
dc.identifier.urihttps://hdl.handle.net/20.500.12418/14677
dc.identifier.wosWOS:000879233700001en_US
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.relation.publicationcategoryRaportr
dc.rightsinfo:eu-repo/semantics/openAccesstr
dc.subjectInGaAs/InPtr
dc.subjectx-ray diffractiontr
dc.subjectSEM-EDXtr
dc.subjectRamantr
dc.subjectTemperature depentend photoluminesencetr
dc.subjectcarrier localizationtr
dc.titleExperimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigationen_US
dc.typeArticleen_US

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