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Shallow donors in a triple graded quantum well under electric and magnetic field
(ELSEVIER SCIENCE BV, 2003)
The binding energy of the donor impurity in triple graded GaAs-(Ga,Al)As quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic and electric field ...
Optical transitions in quantum well wires under intense laser radiation
(ELSEVIER SCIENCE BV, 2003)
The influence of a laser-field on the exciton binding energy and interband optical transitions in quantum-well wires is calculated by using a variational method and in the effective mass approximation. We conclude that in ...
Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness
(SPRINGER-VERLAG, 2003)
For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si delta-doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger ...
The effect of the donor distribution on the electronic structure of two coupled Si delta-doped layers in GaAs
(ELSEVIER SCIENCE BV, 2003)
We have theoretically investigated the electronic structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform donor distribution we have studied the influence of donor concentration on the subband structure. ...
Exciton absorption in quantum-well wires under the electric field
(ELSEVIER SCIENCE BV, 2003)
The binding energy of excitons, and interband optical absorption in quantum-well wires of GaAs surrounded by Ga1-xAlxAs is calculated in effective-mass approximation, using a variational approach. Results obtained show ...
Binding energies of shallow donor impurities in different shaped quantum wells under an applied electric field
(ELSEVIER SCIENCE BV, 2003)
We present a variational method to compute the binding energies for a hydrogenic impurity located at the center of the finite parabolic (PQW), V-shaped (VQW or full graded well) and square (SQW) GaAs-Ga1-xAlxAs quantum ...
Electronic properties of two coupled Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have theoretically investigated the subband structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The ...
Geometrical effects on shallow donor impurities in quantum wires
(ELSEVIER SCIENCE BV, 2003)
We have studied theoretically the impurity binding energy for wires of different shapes (V-shaped quantum wire (V-QWR) and rectangular wire) with a variational procedure without using any coordinate transformation. The ...
Optical properties of excitons in quantum well wires under the magnetic field
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2003)
The binding energy of excitons in quantum well wires of GaAs surrounded by Ga1-xAlxAs was calculated in an effective mass approximation with the use of the variational approach. Results obtained show that the exciton binding ...
Binding energy of hydrogenic impurities in a quantum well under the tilted magnetic field
(PERGAMON-ELSEVIER SCIENCE LTD, 2003)
This paper treats theoretically the angle dependence of the ground state binding energy of a shallow donor impurity in semiconductor quantum-well systems on the tilted magnetic field. By making an appropriate coordinate ...