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The triple Si delta-doped GaAs structure
(SPRINGER, 2005)
For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si delta-doped GaAs, at T = 0 K. To ...
Optical transitions in quantum well wires under intense laser radiation
(ELSEVIER SCIENCE BV, 2003)
The influence of a laser-field on the exciton binding energy and interband optical transitions in quantum-well wires is calculated by using a variational method and in the effective mass approximation. We conclude that in ...
Double quantum well electronic energy spectrum within a tilted magnetic field
(ACADEMIC PRESS LTD, 1999)
The analytical solutions of the Schrodinger equation for a double quantum well structure (DQWS) subjected to an externally applied tilted magnetic field are obtained and the results are discussed. The dependency of the ...
Electronic properties of Si delta-doped GaAs under an applied electric field
(IOP PUBLISHING LTD, 2001)
We have theoretically investigated the electronic structure of Si delta -doped GaAs inserted into a quantum well under an applied electric field. For uniform distribution we have studied the influence of the electric field ...
Effect of crossed electric and magnetic fields on donor impurity binding energy
(SPRINGER-VERLAG, 2004)
By using an appropriate coordinate transformation, we have calculated variationally the ground state binding energy of a hydrogenic donor impurity in a quantum well in the presence of crossed electric and magnetic fields ...
Barrier thickness dependence of optical absorption of excitons in GaAs coupled quantum wire
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)
We have calculated the binding energy of excitons, and the interband optical absorption in rectangular coupled quantum-well wires of GaAs surrounded by Ga1-chiAlchiAs in effective-mass approximation, using the variational ...
Si delta-doped GaAs structure with different dopant distribution models
(AMER INST PHYSICS, 2002)
We have theoretically investigated the diffusion of donor impurities of single Si delta-doped GaAs inserted into a quantum well at T=0 K. The spread of the impurities is taken into account in three different models: (i) a ...
Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness
(SPRINGER-VERLAG, 2003)
For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si delta-doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger ...
The effect of the donor distribution on the electronic structure of two coupled Si delta-doped layers in GaAs
(ELSEVIER SCIENCE BV, 2003)
We have theoretically investigated the electronic structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform donor distribution we have studied the influence of donor concentration on the subband structure. ...
The effect of hydrostatic pressure on optical transitions in quantum-well wires
(ELSEVIER SCIENCE BV, 2004)
Using a variational approach, we have investigated mainly, the effect of the hydrostatic pressure, and the wire dimension on the interband optical absorption and the exciton binding energy in a quantum-well wire. We have ...
