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The triple Si delta-doped GaAs structure
(SPRINGER, 2005)
For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si delta-doped GaAs, at T = 0 K. To ...
Optical transitions in quantum well wires under intense laser radiation
(ELSEVIER SCIENCE BV, 2003)
The influence of a laser-field on the exciton binding energy and interband optical transitions in quantum-well wires is calculated by using a variational method and in the effective mass approximation. We conclude that in ...
Double quantum well electronic energy spectrum within a tilted magnetic field
(ACADEMIC PRESS LTD, 1999)
The analytical solutions of the Schrodinger equation for a double quantum well structure (DQWS) subjected to an externally applied tilted magnetic field are obtained and the results are discussed. The dependency of the ...
Electronic properties of Si delta-doped GaAs under an applied electric field
(IOP PUBLISHING LTD, 2001)
We have theoretically investigated the electronic structure of Si delta -doped GaAs inserted into a quantum well under an applied electric field. For uniform distribution we have studied the influence of the electric field ...
Effect of crossed electric and magnetic fields on donor impurity binding energy
(SPRINGER-VERLAG, 2004)
By using an appropriate coordinate transformation, we have calculated variationally the ground state binding energy of a hydrogenic donor impurity in a quantum well in the presence of crossed electric and magnetic fields ...
Barrier thickness dependence of optical absorption of excitons in GaAs coupled quantum wire
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)
We have calculated the binding energy of excitons, and the interband optical absorption in rectangular coupled quantum-well wires of GaAs surrounded by Ga1-chiAlchiAs in effective-mass approximation, using the variational ...
Binding energy of excitons in symmetric and asymmetric coupled double quantum wells in a uniform magnetic field
(IOP PUBLISHING LTD, 2000)
The binding energy of excitons in symmetric and asymmetric coupled double GaAs/Ga1-xAlxAs quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic ...
Electric field dependence of the excitonic properties in graded double quantum wells
(IOP PUBLISHING LTD, 1999)
A quasi-bound state approximation is used to obtain the electric field dependence of the eigenvalues, eigenfunctions, electron-hole overlap integrals and excitonic binding energies for coupled, graded double quantum wells ...
Electric field and intense laser field effects on the intersubband optical absorption in a graded quantum well
(IOP PUBLISHING LTD, 2005)
The laser field dependence of the intersubband optical absorption in a graded quantum well (GQW), under an applied electric field is calculated in the effective mass approximation. We have theoretically shown that, in the ...
Exciton absorption in quantum-well wires under the electric field
(ELSEVIER SCIENCE BV, 2003)
The binding energy of excitons, and interband optical absorption in quantum-well wires of GaAs surrounded by Ga1-xAlxAs is calculated in effective-mass approximation, using a variational approach. Results obtained show ...
