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The photoionization cross-section and binding energy of impurities in quantum wires: Effects of the electric and magnetic field
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)
Using a variational approach, we have calculated the impurity position dependence of the photoionizaton cross-section and the binding energy for a hydrogenic donor impurity in a quantum well wire in the presence of the ...
Binding energies of excitons in symmetric and asymmetric quantum wells in a magnetic field
(ACADEMIC PRESS LTD, 1998)
The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga1-xAlxAs quantum wells is calculated with the use of a variational approach. Results have been obtained as a function of the potential symmetry, and ...
The effect of an intense laser field on magneto donors in semiconductors
(ELSEVIER SCIENCE BV, 2003)
The laser-field dependence of the binding energy of shallow-donor impurities in graded, and square quantum wells under the external magnetic field is calculated by a variational method and in the effective mass approximation. ...
Hydrogenic impurities in graded GaAs-(Ga,Al)As quantum-well wires in an electric field
(ELSEVIER SCIENCE BV, 2002)
The electric field dependence of polarizability and binding energy of shallow-donor impurities in graded quantum-well wires is calculated by a variational method and in the effective-mass approximation. We have considered ...
An alternative method for the exact calculation of Wannier-Stark localization in superlattices
(ACADEMIC PRESS LTD, 2001)
We present an alternative method for the exact calculations of the Wannier-Stark (WS) localization in a long periodic potential corresponding to a (50 Angstrom /30 Angstrom) GaAs/Ga0.7Al0.3As superlattice. We show that the ...
Intense field effects on shallow donor impurities in graded quantum wells
(IOP PUBLISHING LTD, 2003)
Using a variational method and within the effective mass approximation, we calculate the laser-field dependence of binding energy and the polarizability of shallow-donor impurities in graded quantum wells under an external ...
The effect of hydrostatic pressure on optical transitions in quantum-well wires (vol 353, pg 345, 2004)
(ELSEVIER SCIENCE BV, 2005)
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Influence of temperature on the electronic properties of Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have investigated theoretically the electronic structure of Si delta-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and ...
The dependence of the intersubband transitions in square and graded QWs on intense laser fields
(PERGAMON-ELSEVIER SCIENCE LTD, 2004)
The intersubband absorption in square and graded quantum wells under a laser field is calculated within the framework of the effective mass approximation. We conclude that, for quantum wells with different shapes, the laser ...