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Donor Impurity-Related Optical Absorption in GaAs Elliptic-Shaped Quantum Dots
(HINDAWI LTD, 2017)
The conduction band and electron-donor impurity states in elliptic-shaped GaAs quantum dots under the effect of an externally applied electric field are calculated within the effective mass and adiabatic approximations ...
Impurity-related linear and nonlinear optical response in quantum-well wires with triangular cross section
(ELSEVIER SCIENCE BV, 2013)
The Is-like and 2p-like donor impurity energy states are studied in a semiconductor quantum wire of equilateral triangular cross section as functions of the impurity position and the geometrical size of the structure. ...
Third-harmonic generation of a laser-driven quantum dot with impurity
(ELSEVIER SCIENCE BV, 2018)
The third-harmonic generation (THG) coefficient for a laser-driven quantum dot with an on-center Gaussian impurity under static magnetic field is theoretically investigated. Laser field effect is treated within the ...
Simultaneous effects of hydrostatic pressure and temperature on the nonlinear optical properties in a parabolic quantum well under the intense laser field
(ELSEVIER SCIENCE BV, 2013)
In this present study, we have theoretically investigated the effects of hydrostatic pressure and temperature on the nonlinear optical properties in a typical GaAs/Ga0.7Al0.3As parabolic quantum well under the intense laser ...
OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al-0.3 Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2012)
The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1-2) transition and the binding energy of the shallow-donor impurities in a Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As quantum well ...
The effects of the electric and intense laser field on the binding energies of donor impurity states (1s and 2p(+/-)) and optical absorption between the related states in an asymmetric parabolic quantum well
(ELSEVIER SCIENCE BV, 2016)
We have calculated the effects of electric and intense laser fields on the binding energies of the ground and some excited states of conduction electrons coupled to shallow donor impurities as well as the total optical ...
Photoionization cross-section and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wires
(PERGAMON-ELSEVIER SCIENCE LTD, 2011)
We have investigated the effects of the nitrogen and indium concentrations on the photoionization crosssection and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wires. The numerical calculations ...
ELECTRONIC STRUCTURE AND BAND BENDING OF MODULATION-DOPED GaAs/Al-x Ga1-xAs SYMMETRIC AND ASYMMETRIC DOUBLE QUANTUM WELLS UNDER AN APPLIED ELECTRIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2009)
In this study, we have calculated theoretically the effects of the electric field and doping concentration on the sub-band energies, the electron population, and total charge density in modulation-doped symmetric and ...
Binding energies of donor impurities in modulation-doped GaAs/AlxGa1-xAs double quantum wells under an electric field
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)
In this study, we have investigated theoretically the binding energies of shallow donor impurities in modulation-doped GaAs/Al0.33Ga0.67 As double quantum wells (DQWs) under an electric field which is applied along the ...
Effect of hydrostatic pressure on interband transitions in coupled quantum wires
(IOP PUBLISHING LTD, 2007)
We calculate the exciton binding energy and interband optical absorption in a rectangular coupled quantum wire under the hydrostatic pressure in the effective-mass approximation, using the variational approach. It is found ...