Search
Now showing items 51-60 of 68
Influence of an applied electric field on the electronic properties of Si delta-doped GaAs
(E D P SCIENCES, 2003)
We have theoretically studied the electronic structure of Si delta-doped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence ...
The orbit centre dependence of the energy levels in a single quantum well under external titled magnetic and electric fields
(IOP PUBLISHING LTD, 1997)
The: analytical solutions of the Schrodinger equation for a square well system subjected to an externally applied electric field in the growth direction and an externally applied tilted magnetic field are obtained and the ...
Shallow donor impurities in different shaped double quantum wells under the electric field (vol 241, pg 1066, 2004)
(WILEY-V C H VERLAG GMBH, 2005)
…
The photoionization cross-section and binding energy of impurities in quantum wires: Effects of the electric and magnetic field
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)
Using a variational approach, we have calculated the impurity position dependence of the photoionizaton cross-section and the binding energy for a hydrogenic donor impurity in a quantum well wire in the presence of the ...
Binding energies of excitons in symmetric and asymmetric quantum wells in a magnetic field
(ACADEMIC PRESS LTD, 1998)
The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga1-xAlxAs quantum wells is calculated with the use of a variational approach. Results have been obtained as a function of the potential symmetry, and ...
The effect of an intense laser field on magneto donors in semiconductors
(ELSEVIER SCIENCE BV, 2003)
The laser-field dependence of the binding energy of shallow-donor impurities in graded, and square quantum wells under the external magnetic field is calculated by a variational method and in the effective mass approximation. ...
Hydrogenic impurities in graded GaAs-(Ga,Al)As quantum-well wires in an electric field
(ELSEVIER SCIENCE BV, 2002)
The electric field dependence of polarizability and binding energy of shallow-donor impurities in graded quantum-well wires is calculated by a variational method and in the effective-mass approximation. We have considered ...
A new approach to quantum well infrared photodetectors: Staircase-like quantum well and barriers
(ELSEVIER SCIENCE BV, 2006)
We present a theoretical investigation of a novel staircase-like quantum well infrared photodetector (QWIP). The proposed structure makes use of quantum wells and barriers with increasing Al content both in the wells and ...
Intersubband optical absorption of double Si delta-doped GaAs layers
(ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD, 2004)
For different applied electric fields the intersubband transitions of double Si delta-doped GaAs structures are theoretically investigated for a uniform donor distribution. The electronic structure has been calculated by ...