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Now showing items 191-200 of 262
Effect of substrate temperature on Raman study and optical properties of GeOx/ Si thin films
(14.10.2023)
In this study, GeOx
thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at
how the temperature of the substrate affected the Raman spectra and optical characteristics of ...
InGaAs-based Gunn light emitting diode
(14.02.2023)
We report an n-type In0.53Ga0.47As based Gunn light emitting diode operated at around 1.6 μm. The device
structure comprises of an n-type In0.53Ga0.47As epilayer with a thickness of 5 μm grown by Metal Organic Vapour
Phase ...
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)
High crystalline and optical quality aluminum nitride (AlN) films with thin
thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase
epitaxy) and the NH3 flow rate has been changed to improve the morphology
and ...
Modeling of temperature‑dependent photoluminescence of GaN epilayer by artificial neural network
(22.06.2023)
Artificial neural networks (ANNs) are a type of machine learning model that are designed to mimic the structure and function
of biological neurons. They are particularly well-suited for tasks such as image and speech ...
Comprehensive growth and characterization study of GeOx/Si
(15.02.2023)
In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness
was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural
and optical ...
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)
High crystalline and optical quality aluminum nitride (AlN) films with thin
thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase
epitaxy) and the NH3 flow rate has been changed to improve the morphology
and ...
Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE
(15.01.2023)
In this study, we report the effect of the combination of Si-doped and undoped inter-layer transition
time in the strain compensated In 0.67 Ga 0.33 As/In 0.36 Al 0.64 As quantum cascade laser (QCL) structure grown
on ...
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
(15.01.2023)
Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to
LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ...
Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
(23.04.2023)
In this study, we investigated the structural, optical, magnetic, and conductive properties of nickel oxide (NiO)
films on glass substrates deposited using Radio Frequency (RF) magnetron sputtering with varying Ar ...
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)
Carbon (C)-doped aluminum gallium arsenide (
AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations
have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ...