dc.contributor.author | Alaydin, Behçet Özgür | |
dc.contributor.author | Keller, Ursula | |
dc.contributor.author | Barh, Ajanta | |
dc.contributor.author | Gaulke, Marco | |
dc.contributor.author | Golling, Matthias | |
dc.contributor.author | Heidrich, Jonas | |
dc.date.accessioned | 2022-05-13T11:19:27Z | |
dc.date.available | 2022-05-13T11:19:27Z | |
dc.date.issued | 22/11/2021 | tr |
dc.identifier.uri | https://opg.optica.org/oe/fulltext.cfm?uri=oe-29-24-40360&id=464954 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/13048 | |
dc.description.abstract | We compare the gain and continuous wave lasing properties of two InGaSb-based vertical external cavity surface emitting lasers (InGaSb VECSEL) with different heat management approaches operating at a center wavelength of around 2𝜇��m. To date, intracavity heatspreaders have been required for good average output power, which have many trade-offs, especially for passive modelocking. Here we demonstrate a record high average output power of 810 mW without an intracavity heatspreader using a backside-cooled non-resonant VECSEL chip optimized for modelocking. In addition, we introduce and demonstrate an optical characterization for a wavelength range of 1.9 to 3𝜇��m to precisely measure wavelength-dependent gain saturation and spectral gain. Gain characteristics are measured as a function of wavelength, fluence, pump power and temperature. Small signal gain of more than 5%, small saturation fluences and broad gain bandwidths of more than 90 nm are demonstrated. In comparison to a commercial VECSEL chip with an intracavity heatspreader, we have obtained similar average output power even though our VECSEL chip is designed for antiresonance. | tr |
dc.language.iso | eng | tr |
dc.relation.isversionof | https://doi.org/10.1364/OE.438157 | tr |
dc.rights | info:eu-repo/semantics/openAccess | tr |
dc.title | High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization | tr |
dc.type | article | tr |
dc.contributor.department | Fen Fakültesi | tr |
dc.contributor.authorID | 0000-0003-0935-4836 | tr |
dc.relation.publicationcategory | Rapor | tr |