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dc.contributor.authorJaouane, M.
dc.contributor.authorFakkahi, A.
dc.contributor.authorEd-Dahmouny, A.
dc.contributor.authorEl-Bakkari, K.
dc.contributor.authorTüzemen, Ahmet Türker
dc.contributor.authorArraoui, R.
dc.contributor.authorSali, A.
dc.contributor.authorUngan, Fatih
dc.date.accessioned2024-02-26T13:44:58Z
dc.date.available2024-02-26T13:44:58Z
dc.date.issued12 Şubat 2023tr
dc.identifier.urihttps://hdl.handle.net/20.500.12418/14332
dc.description.abstractBased on the finite element method using the FEniCS computing platform and python programming, we solve the Schrödinger equation within the effective mass approximation. Its solution gives us the necessary energy for an electron to transit from an intermediate band to a conduction band, as well as the distribution of probability density within the system. In this work, we have investigated the efficiency of the InAs/GaAs pyramid quantum dot intermediate band solar cell (PQD-IBSC) as a function of the structure parameters and quantum dot density. The simulation results indicated the strong dependence of the efficiency of PQD-IBSC on the confinement effect, quantum dot number or quantum dot density and coupling strength. The conversion efficiency grows from 14.4587% to the optimal efficiency 17.8807%. Generally, the best efficiency is obtained for small barrier width, large quantum dot height and great quantum dot density.tr
dc.language.isoengtr
dc.publisherSpringertr
dc.relation.isversionofhttps://doi.org/10.1140/epjp/s13360-023-03736-5tr
dc.rightsinfo:eu-repo/semantics/closedAccesstr
dc.titleModeling and simulation of the influence of quantum dots density on solar cell propertiestr
dc.typearticletr
dc.relation.journalThe European Physical Journal Plustr
dc.contributor.departmentEğitim Fakültesitr
dc.contributor.authorID0000-0002-6120-6008tr
dc.identifier.volume138tr
dc.identifier.issueMakale numarası:148tr
dc.identifier.endpage10tr
dc.identifier.startpage1tr
dc.relation.publicationcategoryUluslararası Hakemli Dergide Makale - Kurum Öğretim Elemanıtr


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