Now showing items 1-3 of 3
Binding energies of shallow donor impurities in different shaped quantum wells under an applied electric field
(ELSEVIER SCIENCE BV, 2003)
We present a variational method to compute the binding energies for a hydrogenic impurity located at the center of the finite parabolic (PQW), V-shaped (VQW or full graded well) and square (SQW) GaAs-Ga1-xAlxAs quantum ...
The effects of hydrostatic pressure and applied electric field on shallow donor impurities in GaAs/GaAlAs graded quantum well
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2005)
Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs ...
Subband structure and excitonic binding of graded GaAs/Ga1-xAlxAs quantum wells under an electric field
(ACADEMIC PRESS LTD, 1998)
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAlAs quantum well are calculated variationally within the effective mass approximation. The very sensitive dependence of ...