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Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential
(SPRINGER, 2011)
In this work are studied the intense laser effects on the impurity states in GaAs-Ga1- (x) Al (x) As quantum wells under applied electric and magnetic fields. The electric field is taken oriented along the growth direction ...
Linear and nonlinear optical properties in a semiconductor quantum well under intense laser radiation: Effects of applied electromagnetic fields
(ELSEVIER SCIENCE BV, 2012)
In this work we are studying the intense laser effects on the electron-related linear and nonlinear optical properties in GaAs-Ga1-xAlxAs quantum wells under applied electric and magnetic fields. The calculated quantities ...
The linear and nonlinear intersubband optical absorption coefficients and refractive index changes in a V-shaped quantum well under the applied electric and magnetic fields
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2011)
In this study, the changes in the optical absorption coefficients and the refractive index in a V-shaped quantum well have investigated theoretically. Within the effective mass approximation, the electronic structure of ...
Shallow donors in a coupled triple graded quantum well under the electric and magnetic fields
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2006)
The binding energy of the donor in three different shaped triple graded GaAs-(Ga, Al)As quantum wells which is obtained by changing the depth of the central-well potential (V-o) is calculated by using a variational approach. ...
Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2016)
The effects of nitrogen and indium concentrations on the 1s, 2s, 2p(0) and 2p +/--like donor impurity energy states in a single Ga1-xInxNyAs1-y/GaAs quantum well (QW) are investigated by variational approach within the ...
Nonlinear optical properties of asymmetric double-graded quantum wells
(TAYLOR & FRANCIS LTD, 2018)
In this work, the effects of the structure parameters, such as the central barrier thickness and the aluminium concentrations x, on the linear and nonlinear intersubband optical absorption coefficients and refractive index ...
Impurity-related linear and nonlinear optical response in quantum-well wires with triangular cross section
(ELSEVIER SCIENCE BV, 2013)
The Is-like and 2p-like donor impurity energy states are studied in a semiconductor quantum wire of equilateral triangular cross section as functions of the impurity position and the geometrical size of the structure. ...
Simultaneous effects of hydrostatic pressure and temperature on the nonlinear optical properties in a parabolic quantum well under the intense laser field
(ELSEVIER SCIENCE BV, 2013)
In this present study, we have theoretically investigated the effects of hydrostatic pressure and temperature on the nonlinear optical properties in a typical GaAs/Ga0.7Al0.3As parabolic quantum well under the intense laser ...
OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al-0.3 Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2012)
The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1-2) transition and the binding energy of the shallow-donor impurities in a Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As quantum well ...
Photoionization cross-section and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wires
(PERGAMON-ELSEVIER SCIENCE LTD, 2011)
We have investigated the effects of the nitrogen and indium concentrations on the photoionization crosssection and binding energy of shallow donor impurities in Ga1-xInxNyAs1-y/GaAs quantum wires. The numerical calculations ...