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Shallow donors in a triple graded quantum well under electric and magnetic field
(ELSEVIER SCIENCE BV, 2003)
The binding energy of the donor impurity in triple graded GaAs-(Ga,Al)As quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic and electric field ...
Optical transitions in quantum well wires under intense laser radiation
(ELSEVIER SCIENCE BV, 2003)
The influence of a laser-field on the exciton binding energy and interband optical transitions in quantum-well wires is calculated by using a variational method and in the effective mass approximation. We conclude that in ...
Intersubband transitions for single, double and triple Si delta-doped GaAs layers
(IOP PUBLISHING LTD, 2003)
The intersubband transitions in single, double and triple Si delta-doped GaAs structures are theoretically studied for different applied electric fields. Electronic properties such as the confining potential, the subband ...
Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness
(SPRINGER-VERLAG, 2003)
For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si delta-doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger ...
Tilted magnetic field effect on the subbands of a GaAlAs diode with a GaAs quantum well
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2003)
We have calculated the subbands in the GaAs quantum well at the n-side of the junction in a Ga1-xAlxAs diode. We show that the density of carriers confined in the quantum well increases by the increasing magnetic field ...
The effect of the donor distribution on the electronic structure of two coupled Si delta-doped layers in GaAs
(ELSEVIER SCIENCE BV, 2003)
We have theoretically investigated the electronic structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform donor distribution we have studied the influence of donor concentration on the subband structure. ...
The electric field effects on intersubband optical absorption of Si delta-doped GaAs layer
(PERGAMON-ELSEVIER SCIENCE LTD, 2003)
The intersubband transitions in Si delta-doped GaAs structures is theoretically investigated for different applied electric fields. For an uniform distribution the electronic structure has been calculated by solving the ...
Exciton absorption in quantum-well wires under the electric field
(ELSEVIER SCIENCE BV, 2003)
The binding energy of excitons, and interband optical absorption in quantum-well wires of GaAs surrounded by Ga1-xAlxAs is calculated in effective-mass approximation, using a variational approach. Results obtained show ...
Binding energies of shallow donor impurities in different shaped quantum wells under an applied electric field
(ELSEVIER SCIENCE BV, 2003)
We present a variational method to compute the binding energies for a hydrogenic impurity located at the center of the finite parabolic (PQW), V-shaped (VQW or full graded well) and square (SQW) GaAs-Ga1-xAlxAs quantum ...
Electronic properties of two coupled Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have theoretically investigated the subband structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The ...
