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Subband structure and band bending in symmetric modulation-doped double quantum wells
(EDP SCIENCES S A, 2005)
We have calculated the subband structure and confinement potential of modulation-doped Ga1-xAlxAs-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are ...
The effect of the donor distribution on the electronic structure of two coupled Si delta-doped layers in GaAs
(ELSEVIER SCIENCE BV, 2003)
We have theoretically investigated the electronic structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform donor distribution we have studied the influence of donor concentration on the subband structure. ...
Shallow donor impurity binding energy in the V-shaped quantum well under the crossed electric and magnetic fields
(ELSEVIER SCIENCE BV, 2005)
We have calculated variationally the ground state binding energy of a hydrogenic donor impurity in V-shaped quantum well (VQW) or full-graded GaAs/Ga1-xAlxAs quantum wells in the presence of crossed electric and magnetic ...
The effect of hydrostatic pressure on optical transitions in quantum-well wires
(ELSEVIER SCIENCE BV, 2004)
Using a variational approach, we have investigated mainly, the effect of the hydrostatic pressure, and the wire dimension on the interband optical absorption and the exciton binding energy in a quantum-well wire. We have ...
Electronic energy spectra in a multiple quantum well within external electric and tilted magnetic fields
(IOP PUBLISHING LTD, 2000)
The analytical solution of the Schrodinger equation for a multiple-quantum-well system subjected to an externally applied electric field in the growth direction and an externally applied tilted magnetic field are obtained ...
The electric field effects on intersubband optical absorption of Si delta-doped GaAs layer
(PERGAMON-ELSEVIER SCIENCE LTD, 2003)
The intersubband transitions in Si delta-doped GaAs structures is theoretically investigated for different applied electric fields. For an uniform distribution the electronic structure has been calculated by solving the ...
Binding energy of excitons in symmetric and asymmetric coupled double quantum wells in a uniform magnetic field
(IOP PUBLISHING LTD, 2000)
The binding energy of excitons in symmetric and asymmetric coupled double GaAs/Ga1-xAlxAs quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic ...
Electric field and intense laser field effects on the intersubband optical absorption in a graded quantum well
(IOP PUBLISHING LTD, 2005)
The laser field dependence of the intersubband optical absorption in a graded quantum well (GQW), under an applied electric field is calculated in the effective mass approximation. We have theoretically shown that, in the ...
Exciton absorption in quantum-well wires under the electric field
(ELSEVIER SCIENCE BV, 2003)
The binding energy of excitons, and interband optical absorption in quantum-well wires of GaAs surrounded by Ga1-xAlxAs is calculated in effective-mass approximation, using a variational approach. Results obtained show ...
Binding energies of shallow donor impurities in different shaped quantum wells under an applied electric field
(ELSEVIER SCIENCE BV, 2003)
We present a variational method to compute the binding energies for a hydrogenic impurity located at the center of the finite parabolic (PQW), V-shaped (VQW or full graded well) and square (SQW) GaAs-Ga1-xAlxAs quantum ...