Browsing Nanoteknoloji Mühendisliği Bölümü by Title
Now showing items 67-82 of 82
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Sensitivity of indium molar fraction in InGaN quantum wells for near-UV light-emitting diodes
(2022)InGaN-based quantum wells (QWs) have higher threading dislocation density (TDD) in InGaN Light-emitting diode (LED). Despite of higher TDD, variation of Indium (In) molar fraction in the QW generate localized excitons ... -
Synthesis of Multifunctional Organic Nanoparticles Combining Photodynamic Therapy and Chemotherapeutic Drug Release
(2022)Cancer is a group of diseases that are caused by uncontrolled proliferation of cells in various parts of the body and it is one of the most studied diseases worldwide. Photodynamic therapy (PDT) is a treatment that uses ... -
Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
(10.12.2022)Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution X-ray ... -
The effect of structure parameters and static electric field on the nonlinear optical properties of triple InGaAs/GaAs quantum well
(ScienceDirect, 2023)Optical properties of In x Ga 1-x As/GaAs triple QW are studied for different quantum well thicknesses and external electric fields. The effective mass approximation is used to calculate the band alignment of the structure. ... -
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
(2022)AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is used as surfactant to improve ... -
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
(3.06.2022)AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is used as surfactant to improve ... -
The nonlinear optical rectification, second and third harmonic generation coefficients of Konwent potential quantum wells
(Springer, 2022)We have theoretically investigated the effect of structure parameters and applied external fields on the Ga1−xAlxAs/GaAs Konwent quantum well structure. Results of theoretical simulation have clarified the impact of applied ... -
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
(5.01.2022)The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted for ... -
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
(2022)The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted ... -
Vcsel tabanlı yüksek güçlü yarı iletken lazerler
(15.01.2021)VCSEL’ler (vertical-cavity surface-emitting laser, düşey- kovuklu yüzey-ışımalı lazer) yirmi yılı aşkın bir süredir giderek gelişen veri iletişimi (datacom) alanının anahtar bileşenlerinden birisidir. Bunun yanında son ... -
Yakın Kızıl Ötesi Spektrumu Sogurucu Optik Filtre Gelistirilmesi
(TUBITAK, 2023)Güneş ısısını soğuran ve birçok optik uygulama için yakın kızılötesi (NIR) soğuruculuğu olan materyallerin geliştirilmesi güneş enerjisi uygulamaları yanında 1064 nm dalgaboylu lazer ışınını soğurması niteliği ile savunma ... -
ystematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
(2022)Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution X-ray ... -
Yüksek Güç-Frekans Uygulamaları Için MOCVD ile Epitaksiyel AlN Kristalinin Büyütülmesi, Katkılanması, Karakterizasyonu ve Aygıt Üretimi
(15.03.2021)Bu projede yüksek güç-frekans uygulamaları için MOCVD (metal organik kimyasal buhar depolama) ile epitaksiyel AlN kristalinin büyütülmesi, katkılanması, karakterizasyonu ve aygıt üretimi yapılarak diyot karakteristiklerinin ... -
Yüksek Güç-Frekans Uygulamaları Için MOCVD ile Epitaksiyel AlN Kristalinin Büyütülmesi, Katkılanması, Karakterizasyonu ve Aygıt Üretimi
(15.03.2021)Bu projede yüksek güç-frekans uygulamaları için MOCVD (metal organik kimyasal buhar depolama) ile epitaksiyel AlN kristalinin büyütülmesi, katkılanması, karakterizasyonu ve aygıt üretimi yapılarak diyot karakteristiklerinin ... -
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.08.2021)In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ... -
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.07.2021)In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...