Browsing Nanoteknoloji Mühendisliği Bölümü by Language "eng"
Now showing items 1-20 of 43
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Affinity Recognition Based Gravimetric Nanosensor for Equilin Detection
(MDPI, 30 Mayıs 2)The estrogenic hormones that are widely used in postmenopausal hormone supplements for women contaminate natural water resources. Equilin (Equ) is one of the estrogenic hormones that have a maximum contaminant level of ... -
Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
(07.06.2021)Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640°C are investigated. While all other sources ... -
Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential
(15.11.2021)We are presenting a theoretical investigation on the effects of applied electric, magnetic, and non-resonant intense laser field on the coefficients of intersubband linear, third-order nonlinear, and total optical ... -
Comparison of Particle Shape, Surface Area, and Color Properties of the Calcite Particles Ground by Stirred and Ball Mill
(2023)Since the particle size, shape, specific surface area, and purity of the ground calcium carbonate (GCC) decide its usability in the paper, paint, and plastic industries, the effect of grinding is important. However, the ... -
Comprehensive growth and characterization study of GeOx/Si
(15.02.2023)In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural and optical ... -
Computation of Atomic Dipole Spectra for Different Atoms by Considering Short and Long Electron Trajectories under the Intense Laser Pulse
(9TH INTERNATIONAL ADVANCED TECHNOLOGIES SYMPOSIUM, 2021)In this work, computation of the nonlinear dipole response of a single atom is performed by considering the ionization of the electron under the intense laser field. The dipole spectra for xenon (Xe) and argon (Ar) gases ... -
Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry
(Springer, 2022)InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the ... -
Effect of Ultrashort Laser Pulse Shape on the Dipole Spectrum of a Single Electron
(International Conference on Advances in Engineering, Architecture, Science and Technology (ICAEAST 2021)), 2021)In this study, the effects of ultrashort laser pulse shape for the laser-matter interaction have been considered. Three different pulse shapes, Gaussian, Super-Gaussian, and Cosine-Squared, are used to calculate the dipole ... -
Effects of applied external fields on the nonlinear optical rectification, second, and third-harmonic generation in an asymmetrical semi exponential quantum well
(Springer, 2022)The asymmetric potential profiles are focus of interest for researchers who study semiconductor optoelectronic devices. Therefore, in this study, the effects of structure parameters (σ and V0) and applied external ... -
Effects of Heavy Iodine Atoms and π-Expanded Conjugation on Charge Transfer Dynamics in Carboxylic Acid BODIPY Derivatives as Triplet Photosensitizers
(2022)Borondipyrromethene (BODIPY) chromophores are composed of a functional-COOH group at meso position with or without a biphenyl ring, and their compounds with heavy iodine atoms at −2, −6 positions of the BODIPY indacene ... -
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
(15.01.2023)Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ... -
Generation of Coherent Extreme Ultraviolet Radiation in an Air Gas Cell with a High Power Femtosecond Laser System
(Springer, 2021)High harmonic generation (HHG) in air medium is experimentally produced by using a state-ofthe-art high power laser system. The harmonic orders up to 35th harmonic are well observed. Optical power dependence of harmonic ... -
Generation of even and odd harmonics in the XUV region with controlling the relative delay and polarization of two-color fields
(Elsevier, 2021)We report high harmonic generation in the extreme ultraviolet (XUV) region by using two-color laser fields at the wavelengths of 800 nm and 400 nm. With a Ti: sapphire femtosecond laser at a 10 Hz repetition rate efficient ... -
High harmonic generations in GaAs/AlGaAs superlattice: Effect of electric and magnetic field
(Elsevier, 2023)In this study, we have examined the nonlinear optical rectification (NOR), the second harmonic generation (SHG), and the third harmonic generation (THG) coefficients of the AlxGa1-xAs/GaAs superlattice with a periodically ... -
High harmonic generations triggered by the intense laser field in GaAs/ AlxGa1-xAs honeycomb quantum well wires
(Elsevier, 2023)Under constant electric and magnetic fields, the potential profile of the honeycomb quantum well wire (HQWW) is studied for varying intense laser fields to trigger and optimize high harmonics (nonlinear optical rectification, ... -
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow rate has been changed to improve the morphology and ... -
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)Carbon (C)-doped aluminum gallium arsenide ( AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ... -
Influence of hydrostatic pressure, temperature, and terahertz laser field on the electron-related optical responses in an asymmetric double quantum well
(Springer, 2021)In this study, the effects of hydrostatic pressure, temperature, and high-frequency intense laser field on the nonlinear optical properties of an asymmetric GaAs/AlGaAs double quantum well was theoretically investigated. ... -
Influence of structural variables and external perturbations on the nonlinear optical rectification, second, and third-harmonic generation in the InP/InGaAs triple quantum well structure
(Springer, 2023)The InP/InGaAs triple quantum well (TQW) structure is of significant interest to researchers studying new generations of semiconductor optoelectronic devices, as it offers valuable opportunities for controlling and enhancing ... -
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ...