Browsing Nanoteknoloji Mühendisliği Bölümü by Access Type "info:eu-repo/semantics/openAccess"
Now showing items 1-20 of 58
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Affinity Recognition Based Gravimetric Nanosensor for Equilin Detection
(MDPI, 30 Mayıs 2)The estrogenic hormones that are widely used in postmenopausal hormone supplements for women contaminate natural water resources. Equilin (Equ) is one of the estrogenic hormones that have a maximum contaminant level of ... -
Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
(07.06.2021)Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640°C are investigated. While all other sources ... -
Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
(07.06.2021)Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640°C are investigated. While all other sources ... -
Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential
(15.11.2021)We are presenting a theoretical investigation on the effects of applied electric, magnetic, and non-resonant intense laser field on the coefficients of intersubband linear, third-order nonlinear, and total optical ... -
Comparison of Particle Shape, Surface Area, and Color Properties of the Calcite Particles Ground by Stirred and Ball Mill
(2023)Since the particle size, shape, specific surface area, and purity of the ground calcium carbonate (GCC) decide its usability in the paper, paint, and plastic industries, the effect of grinding is important. However, the ... -
Comprehensive growth and characterization study of GeOx/Si
(15.02.2023)In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural and optical ... -
Comprehensive growth and characterization study of GeOx/Si
(15.02.2023)In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural and optical ... -
Determination of Optical Properties of MOVPE‑Grown InxGa1‑xAs/ InP Epitaxial Structures by Spectroscopic Ellipsometry
(24.08.2022)InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the ... -
Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE
(15.01.2023)In this study, we report the effect of the combination of Si-doped and undoped inter-layer transition time in the strain compensated In 0.67 Ga 0.33 As/In 0.36 Al 0.64 As quantum cascade laser (QCL) structure grown on ... -
Effect of substrate temperature on Raman study and optical properties of GeOx/ Si thin films
(14.10.2023)In this study, GeOx thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at how the temperature of the substrate affected the Raman spectra and optical characteristics of ... -
Effect of substrate temperature on Raman study and optical properties of GeOx/ Si thin films
(14.10.2023)In this study, GeOx thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at how the temperature of the substrate affected the Raman spectra and optical characteristics of ... -
Effects of applied external fields on the nonlinear optical rectification, second, and third harmonic generation in a quantum well with exponentially confinement potential
(6.11.2021)In the present study, the nonlinear optical rectification (NOR), second harmonic generation (SHG), and third harmonic generation (THG) coefficients in GaAs/GaAlAs quantum well (QW) with exponentially confinement potential ... -
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
(15.01.2023)Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ... -
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
(15.01.2023)Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ... -
Generation of Coherent Extreme Ultraviolet Radiation in an Air Gas Cell with a High Power Femtosecond Laser System
(Springer, 2021)High harmonic generation (HHG) in air medium is experimentally produced by using a state-ofthe-art high power laser system. The harmonic orders up to 35th harmonic are well observed. Optical power dependence of harmonic ... -
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(16.01.2022)teristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. Adjustment of growth kinetics is very important to control the doping. Therefore, pulsed atomic layer epitaxy ... -
High harmonic generations in GaAs/AlGaAs superlattice: Effect of electric and magnetic field
(Elsevier, 2023)In this study, we have examined the nonlinear optical rectification (NOR), the second harmonic generation (SHG), and the third harmonic generation (THG) coefficients of the AlxGa1-xAs/GaAs superlattice with a periodically ... -
High harmonic generations triggered by the intense laser field in GaAs/ AlxGa1-xAs honeycomb quantum well wires
(Elsevier, 2023)Under constant electric and magnetic fields, the potential profile of the honeycomb quantum well wire (HQWW) is studied for varying intense laser fields to trigger and optimize high harmonics (nonlinear optical rectification, ... -
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow rate has been changed to improve the morphology and ... -
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow rate has been changed to improve the morphology and ...