Browsing Nanoteknoloji Mühendisliği Bölümü Makale Koleksiyonu by Author "Eğitim Bilimleri Enstitüsü"
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Comprehensive growth and characterization study of GeOx/Si
Baghdedi, Dhouha; Hopoğlu, Hicret; Sarıtaş, Sevda; Altuntaş, İsmail; Abdelmoula, Najmeddine; Gür, Emre; ŞenadımTüzemen, Ebru (15.02.2023)In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural and optical ... -
Comprehensive growth and characterization study of GeOx/Si
Baghdedi Dhouha; Hopoğlu Hicret; Sarıtaş Sevda; Demir İlkay; Altuntaş İsmail; Abdelmoula Najmeddine; Gür Emre; Şenadım Tüzemen Ebru (15.02.2023)In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural and optical ... -
Determination of Optical Properties of MOVPE‑Grown InxGa1‑xAs/ InP Epitaxial Structures by Spectroscopic Ellipsometry
Emine Kaynar; Muhammed Sayraç; İsmail Altuntaş; İlkay Demir (24.08.2022)InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the ... -
Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE
Pertikel İzel; Demir İlkay (15.01.2023)In this study, we report the effect of the combination of Si-doped and undoped inter-layer transition time in the strain compensated In 0.67 Ga 0.33 As/In 0.36 Al 0.64 As quantum cascade laser (QCL) structure grown on ... -
Effect of substrate temperature on Raman study and optical properties of GeOx/ Si thin films
Baghdedi, Dhouha; Hopoğlu, Hicret; Demir, İlkay; Altuntaş, İsmail; Abdelmoula, Najmeddine; Şenadım, Tüzemen Ebru (14.10.2023)In this study, GeOx thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at how the temperature of the substrate affected the Raman spectra and optical characteristics of ... -
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
Arbia, Marwa Ben; Demir, İlkay; Kaur, Navpreet; Saidi, Faouzi; Zappa, Dario; Comini, Elisabetta; Altuntaş, İsmail; Maaref, Hassen (15.01.2023)Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ... -
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
Arbia Marwa Ben; Demir İlkay; Kaur Navpreet; Saidi Faouzi; Zappa Dario; Comini Elisabetta; Altuntaş İsmail; Maaref Hassen (15.01.2023)Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ... -
High-quality AlN growth: a detailed study on ammonia flow
Yolcu Gamze; Koçak Merve Nur; Ünal Dudu Hatice; Altuntaş İsmail; Demir İlkay (25.01.2023)High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow rate has been changed to improve the morphology and ... -
High-quality AlN growth: a detailed study on ammonia flow
Yolcu, Gamze; Koçak, Merve Nur; Ünal, Dudu Hatice; Altuntaş, İsmail; Demir, İlkay (25.01.2023)High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow rate has been changed to improve the morphology and ... -
In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN
Merve Nur Koçak; Gamze Yolcu; Sabit Horoz; İsmail Altuntaş; İlkay Demir (3.09.2022)The impact of thermal surface cleaning on epitaxial AlN thin films grown on sapphire is investigated in this study at various temperatures. The sapphire substrate is cleaned in a hydrogen environment. Structural, optical, ... -
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
Pertikel, İzel; Kekül, Reyhan; Altuntaş, İsmail; Gür, Emre; Demir, İlkay (27.06.2023)Carbon (C)-doped aluminum gallium arsenide ( AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ... -
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
İzel Pertikel; Reyhan kekül; İsmail Altuntaş; Emre Gür; İlkay Demir (27.06.2023)Carbon (C)-doped aluminum gallium arsenide ( AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ... -
InGaAs-based Gunn light emitting diode
G. Kalyon; S. Mutlu; F. Kuruoglu; I. Pertikel; I. Demir; A. Erol (14.02.2023)We report an n-type In0.53Ga0.47As based Gunn light emitting diode operated at around 1.6 μm. The device structure comprises of an n-type In0.53Ga0.47As epilayer with a thickness of 5 μm grown by Metal Organic Vapour Phase ... -
Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
Hopoğlu, Hicret; Kaya, Dogan; Maslov, Mikhail M.; Kaya, Savas; Demir, İlkay; Altuntaş, İsmail; Ungan, Fatih; Akyol, Mustafa; Ekicibil, Ahmet; Şenadım, Tüzemen Ebru (28.04.2023)In this study, we investigated the structural, optical, magnetic, and conductive properties of nickel oxide (NiO) films on glass substrates deposited using Radio Frequency (RF) magnetron sputtering with varying Ar ... -
Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
Hopoğlu Hicret; Dogan Kaya; Maslov Mikhail M.; Kaya Savas; Demir İlkay; Altuntaş İsmail; Ungan Fatih; Akyol Mustafa; Ekicibil Ahmet; Şenadım Tüzemen Ebru (23.04.2023)In this study, we investigated the structural, optical, magnetic, and conductive properties of nickel oxide (NiO) films on glass substrates deposited using Radio Frequency (RF) magnetron sputtering with varying Ar ... -
Modeling of temperature‑dependent photoluminescence of GaN epilayer by artificial neural network
Şenadım Tüzemen Ebru; Yüksek Ahmet Gürkan; Demir İlkay; Horoz Sabit; Altuntaş İsmail (22.06.2023)Artificial neural networks (ANNs) are a type of machine learning model that are designed to mimic the structure and function of biological neurons. They are particularly well-suited for tasks such as image and speech ... -
Modeling of temperature‑dependent photoluminescence of GaN epilayer by artificial neural network
ŞenadımTüzemen, Ebru; Yüksek, Ahmet Gürkan; Demir, İlkay; Horoz, Sabit; Altuntaş, İsmail (22.06.2023)Artificial neural networks (ANNs) are a type of machine learning model that are designed to mimic the structure and function of biological neurons. They are particularly well-suited for tasks such as image and speech ... -
Optical and nano-mechanical characterization of c-axis oriented AlN film
Padmalochan Panda; Ramaseshan Rajagopalan; S. Tripursundari; İsmail Altuntaş; İlkay Demir (19.05.2022)This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy (MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic ellipsometry. ... -
Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
Smiri Badreddine; R.S. Joshya; İlkay Demir; Saidi Faouzi; İsmail Altuntaş; Delphine Lagarde; Cedric Rober; Marie Xavier; Maaref Hassen (10.12.2022)Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution X-ray ... -
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
Gamze Yolcu; İrem Şimşek; Reyhan kekül; İsmail Altuntaş; Sabit Horoz; İlkay Demir (3.06.2022)AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is used as surfactant to improve ...