Browsing Nanoteknoloji Mühendisliği Bölümü Makale Koleksiyonu by Category "Rapor"
Now showing items 1-20 of 35
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Close oxygen coupled low-pressure chemical vapor deposition growth of high quality β-Ga2O3 on sapphire
(2022)We report on the close oxygen coupled low-pressure chemical vapor deposition (COC-LPCVD) hetero-epitaxial growth of atomically smooth (− 201) oriented β− Ga2O3 on c-plane sapphire. Utilizing a dedicated line within the ... -
Comparison of Particle Shape, Surface Area, and Color Properties of the Calcite Particles Ground by Stirred and Ball Mill
(2023)Since the particle size, shape, specific surface area, and purity of the ground calcium carbonate (GCC) decide its usability in the paper, paint, and plastic industries, the effect of grinding is important. However, the ... -
Comprehensive growth and characterization study of GeOx/Si
(15.02.2023)In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural and optical ... -
Comprehensive growth and characterization study of GeOx/Si
(15.02.2023)In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural and optical ... -
Determination of Optical Properties of MOVPE‑Grown InxGa1‑xAs/ InP Epitaxial Structures by Spectroscopic Ellipsometry
(24.08.2022)InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the ... -
Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE
(15.01.2023)In this study, we report the effect of the combination of Si-doped and undoped inter-layer transition time in the strain compensated In 0.67 Ga 0.33 As/In 0.36 Al 0.64 As quantum cascade laser (QCL) structure grown on ... -
Effect of substrate temperature on Raman study and optical properties of GeOx/ Si thin films
(14.10.2023)In this study, GeOx thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at how the temperature of the substrate affected the Raman spectra and optical characteristics of ... -
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
(15.01.2023)Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ... -
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
(15.01.2023)Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ... -
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(2022)In this study, we report different SiH4 flow condition effects on crystal, surface, optical, and electrical characteristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. ... -
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(16.01.2022)teristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. Adjustment of growth kinetics is very important to control the doping. Therefore, pulsed atomic layer epitaxy ... -
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow rate has been changed to improve the morphology and ... -
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow rate has been changed to improve the morphology and ... -
In-situ and ex-situ face-to-face annealing of epitaxial AlN
(2022)AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE). The changes in the film structure have been investigated by applying different annealing processes which are exsitu ... -
In-situ and ex-situ face-to-face annealing of epitaxial AlN
(26.06.2022)AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE). The changes in the film structure have been investigated by applying different annealing processes which are exsitu ... -
In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN
(3.09.2022)The impact of thermal surface cleaning on epitaxial AlN thin films grown on sapphire is investigated in this study at various temperatures. The sapphire substrate is cleaned in a hydrogen environment. Structural, optical, ... -
In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN.
(2022)The impact of thermal surface cleaning on epitaxial AlN thin films grown on sapphire is investigated in this study at various temperatures. The sapphire substrate is cleaned in a hydrogen environment. Structural, optical, ... -
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)Carbon (C)-doped aluminum gallium arsenide ( AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ... -
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)Carbon (C)-doped aluminum gallium arsenide ( AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ... -
InGaAs-based Gunn light emitting diode
(14.02.2023)We report an n-type In0.53Ga0.47As based Gunn light emitting diode operated at around 1.6 μm. The device structure comprises of an n-type In0.53Ga0.47As epilayer with a thickness of 5 μm grown by Metal Organic Vapour Phase ...