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Now showing items 11-20 of 23
Tilted magnetic field effect on the subbands of a GaAlAs diode with a GaAs quantum well
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2003)
We have calculated the subbands in the GaAs quantum well at the n-side of the junction in a Ga1-xAlxAs diode. We show that the density of carriers confined in the quantum well increases by the increasing magnetic field ...
Subband structure and band bending in symmetric modulation-doped double quantum wells
(EDP SCIENCES S A, 2005)
We have calculated the subband structure and confinement potential of modulation-doped Ga1-xAlxAs-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are ...
The effect of the donor distribution on the electronic structure of two coupled Si delta-doped layers in GaAs
(ELSEVIER SCIENCE BV, 2003)
We have theoretically investigated the electronic structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform donor distribution we have studied the influence of donor concentration on the subband structure. ...
Binding energy of excitons in symmetric and asymmetric coupled double quantum wells in a uniform magnetic field
(IOP PUBLISHING LTD, 2000)
The binding energy of excitons in symmetric and asymmetric coupled double GaAs/Ga1-xAlxAs quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic ...
Electric field dependence of the excitonic properties in graded double quantum wells
(IOP PUBLISHING LTD, 1999)
A quasi-bound state approximation is used to obtain the electric field dependence of the eigenvalues, eigenfunctions, electron-hole overlap integrals and excitonic binding energies for coupled, graded double quantum wells ...
Electronic properties of two coupled Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have theoretically investigated the subband structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The ...
Influence of an applied electric field on the electronic properties of Si delta-doped GaAs
(E D P SCIENCES, 2003)
We have theoretically studied the electronic structure of Si delta-doped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence ...
The orbit centre dependence of the energy levels in a single quantum well under external titled magnetic and electric fields
(IOP PUBLISHING LTD, 1997)
The: analytical solutions of the Schrodinger equation for a square well system subjected to an externally applied electric field in the growth direction and an externally applied tilted magnetic field are obtained and the ...
Binding energies of excitons in symmetric and asymmetric quantum wells in a magnetic field
(ACADEMIC PRESS LTD, 1998)
The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga1-xAlxAs quantum wells is calculated with the use of a variational approach. Results have been obtained as a function of the potential symmetry, and ...
A new approach to quantum well infrared photodetectors: Staircase-like quantum well and barriers
(ELSEVIER SCIENCE BV, 2006)
We present a theoretical investigation of a novel staircase-like quantum well infrared photodetector (QWIP). The proposed structure makes use of quantum wells and barriers with increasing Al content both in the wells and ...