Search
Now showing items 21-30 of 30
The effect of hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wire under the electric field
(ELSEVIER SCIENCE BV, 2005)
Using a variational approach, we have calculated the hydrostatic pressure and electric field effects on the donor-impurity related photoionization cross-section and impurity binding energy in GaAs/GaAlAs quantum well-wires. ...
Binding energy of hydrogenic impurities in a quantum well under the tilted magnetic field
(PERGAMON-ELSEVIER SCIENCE LTD, 2003)
This paper treats theoretically the angle dependence of the ground state binding energy of a shallow donor impurity in semiconductor quantum-well systems on the tilted magnetic field. By making an appropriate coordinate ...
The electric field dependence of a donor impurity in graded GaAs quantum wires
(SPRINGER HEIDELBERG, 2004)
The effect of the electric field on the binding energy of the ground state of a shallow donor impurity in a graded GaAs quantum-well wire (GQWW) was investigated. The electric field was applied parallel to the symmetry ...
Magnetic field and intense laser radiation effects on the interband transitions in quantum well wires
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)
Magnetic field and intense laser radiation effects on the exciton binding energy and interband optical transitions in quantum well wires is calculated using a variational method and in the effective mass approximation. The ...
The photoionization cross-section and binding energy of impurities in quantum wires: Effects of the electric and magnetic field
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)
Using a variational approach, we have calculated the impurity position dependence of the photoionizaton cross-section and the binding energy for a hydrogenic donor impurity in a quantum well wire in the presence of the ...
Binding energies of excitons in symmetric and asymmetric quantum wells in a magnetic field
(ACADEMIC PRESS LTD, 1998)
The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga1-xAlxAs quantum wells is calculated with the use of a variational approach. Results have been obtained as a function of the potential symmetry, and ...
The effect of an intense laser field on magneto donors in semiconductors
(ELSEVIER SCIENCE BV, 2003)
The laser-field dependence of the binding energy of shallow-donor impurities in graded, and square quantum wells under the external magnetic field is calculated by a variational method and in the effective mass approximation. ...
Hydrogenic impurities in graded GaAs-(Ga,Al)As quantum-well wires in an electric field
(ELSEVIER SCIENCE BV, 2002)
The electric field dependence of polarizability and binding energy of shallow-donor impurities in graded quantum-well wires is calculated by a variational method and in the effective-mass approximation. We have considered ...
Intense field effects on shallow donor impurities in graded quantum wells
(IOP PUBLISHING LTD, 2003)
Using a variational method and within the effective mass approximation, we calculate the laser-field dependence of binding energy and the polarizability of shallow-donor impurities in graded quantum wells under an external ...
Subband structure and excitonic binding of graded GaAs/Ga1-xAlxAs quantum wells under an electric field
(ACADEMIC PRESS LTD, 1998)
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAlAs quantum well are calculated variationally within the effective mass approximation. The very sensitive dependence of ...