The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of shallow donor impurities in quantum dots
Abstract
Using a variational approach we have calculated the hydrostatic pressure and temperature effects on the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum dots Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on temperature and hydrostatic pressure (C) 2010 Elsevier Ltd All rights reserved
Source
SUPERLATTICES AND MICROSTRUCTURESVolume
48Issue
6Collections
- Diğer Yayınlar Koleksiyonu [403]
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