Investigation of nitrogen doped ZnO thin films: Effects on their structural and optical properties

dc.authorid0000-0003-0416-8276tr
dc.contributor.authorAydınoğlu, Hafize Seda
dc.contributor.authorHopoğlu, Hicret
dc.contributor.authorÖzer, Ali
dc.contributor.authorŞenadımTüzemen, Ebru
dc.date.accessioned2022-05-17T11:53:51Z
dc.date.available2022-05-17T11:53:51Z
dc.date.issued2021tr
dc.departmentSağlık Hizmetleri Meslek Yüksekokulutr
dc.description.abstractUn-doped and nitrogen-doped ZnO thin films were grown by using radio frequency (RF) magnetron sputtering method changing the nitrogen flow rate between 0% − 12.5% and the thickness dependence of films was determined. The effect of nitrogen doping concentration on the structural, morphological, and optical properties of zinc oxide thin films was studied. X-ray diffraction (XRD) analysis confirmed that the nitrogen-doped ZnO films belong to the hexagonal crystal structure. The optical properties of the grown samples were examined by optical spectrophotometer and spectroscopic ellipsometer. Transmittance spectra were obtained by spectro photometer measurements and the effect of nitrogen ratio was investigated. It has been observed that as the nitrogen ratio increases, the transmittance decreases up to ~500 nm and then increases. By using the trans mittance curve, the energy band gap was calculated. Further detailed optical analysis was made by the spec troscopic ellipsometry technique. Fitting was performed to ensure the agreement between the experimentally obtained Ψ values and theoretically determined Ψ values using the Cauchy model. As a result, the refractive index was found for each film and it was observed that the refractive index decreased as the nitrogen ratio increased. The scanning electron microscopy (SEM) measurements showed that the surface morphology of the films changes with N doping. Nitrogen was observed in Fourier transform infrared spectra analysis. 5% nitrogen doped ZnO films were grown on the glass substrate using RF magnetron sputtering at room temperature. Samples are prepared by varying thicknesses during the deposition process. XRD and SEM measurements of the samples show the variation in the crystal structure and surface morphology of the film with varying thicknesses. All the samples are tested for the transmittance and band gap. The increase of film thickness increases the grain size. The transmittance is influenced by the film thickness.tr
dc.identifier.citationH. Hopoğlu, H. S. Aydınoğlu, A. Özer, E. Şenadım Tüzemen, Investigation of nitrogen doped ZnO thin films: Effects on their structural and optical properties, Optical Materials 122 (2021) 111685, https://doi.org/10.1016/j.optmat.2021.111685tr
dc.identifier.doi10.1016/j.optmat.2021.111685en_US
dc.identifier.issn0925-3467
dc.identifier.scopus2-s2.0-85116932103en_US
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://hdl.handle.net/20.500.12418/13187
dc.identifier.volume122tr
dc.identifier.wosWOS:000710516200003en_US
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElseviertr
dc.relation.ispartofOptical Materialsen_US
dc.relation.publicationcategoryUluslararası Hakemli Dergide Makale - Kurum Öğretim Elemanıtr
dc.rightsinfo:eu-repo/semantics/openAccesstr
dc.subjectN doped ZnO, Magnetron sputtering, Spectroscopic Ellipsometer, XRD, Energy band gaptr
dc.titleInvestigation of nitrogen doped ZnO thin films: Effects on their structural and optical propertiesen_US
dc.typeArticleen_US

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