The combined effects of electric field and embedded dielectric matrix on the electronic and optical properties in Ge/SiGe core/shell quantum dots and its SiGe/Ge inverted structure

In this study, the binding energy (BE) and photoionization cross-section (PICS) coefficients in a Ge/Si0.15Ge 0.85 core/shell quantum dots (CSQDs) and in its inverted structure Si0.15Ge0.85 / Ge (ICSQDs) are studied. The influence of the hydrogenic impurity and capped matrix are taken into account. The electronic states and their related eigenfunctions are computed by solving the three-dimensional Schrodinger equation under the framework of the effective mass approximation (E.M.A) using the variational dimensional. The influence of the core radius and electric field strength on the BE and PICS are investigated. The numerical results reveal that the optoelectronic properties are considerably affected by the electric field strength (EF), immersed oxide matrix (OM) and geometric parameter. The obtained results prove that the PICS magnitude increases as the core radius increases and its resonant peak moves towards the lower energies for Ge/Si0.15Ge0.85 CSQDs structure, and increases as the core radius decreases and its resonant peak experiences a blue shift with increasing core radius for Si0.15Ge 0.85/ Ge ICSQDs. Moreover, with the effects of the surrounding oxide matrix and electric field strength, the PICS magnitude is improved and their resonant peak suffers a redshift.