The combined effects of electric field and embedded dielectric matrix on the electronic and optical properties in Ge/SiGe core/shell quantum dots and its SiGe/Ge inverted structure

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dc.contributor.authorHammouda, K.
dc.contributor.authorYahyaoui, N.
dc.contributor.authorZeiri, N.
dc.contributor.authorBaşer, Pınar
dc.contributor.authorDuque, C. A.
dc.contributor.authorMurshed, Mohammad N.
dc.contributor.authorSaid, M.
dc.date.accessioned2024-10-26T18:09:54Z
dc.date.available2024-10-26T18:09:54Z
dc.date.issued2024
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractIn this study, the binding energy (BE) and photoionization cross-section (PICS) coefficients in a Ge/Si0.15Ge 0.85 core/shell quantum dots (CSQDs) and in its inverted structure Si0.15Ge0.85 / Ge (ICSQDs) are studied. The influence of the hydrogenic impurity and capped matrix are taken into account. The electronic states and their related eigenfunctions are computed by solving the three-dimensional Schrodinger equation under the framework of the effective mass approximation (E.M.A) using the variational dimensional. The influence of the core radius and electric field strength on the BE and PICS are investigated. The numerical results reveal that the optoelectronic properties are considerably affected by the electric field strength (EF), immersed oxide matrix (OM) and geometric parameter. The obtained results prove that the PICS magnitude increases as the core radius increases and its resonant peak moves towards the lower energies for Ge/Si0.15Ge0.85 CSQDs structure, and increases as the core radius decreases and its resonant peak experiences a blue shift with increasing core radius for Si0.15Ge 0.85/ Ge ICSQDs. Moreover, with the effects of the surrounding oxide matrix and electric field strength, the PICS magnitude is improved and their resonant peak suffers a redshift.
dc.description.sponsorshipDeanship of Scientific Research at King Khalid University [RGP.2/186/45]
dc.description.sponsorshipThe authors extend their appreciation to the Deanship of Scientific Research at King Khalid University for funding this work through a large group Research Project under grant number RGP.2/186/45.
dc.identifier.doi10.1016/j.physleta.2024.129760
dc.identifier.issn0375-9601
dc.identifier.issn1873-2429
dc.identifier.scopus2-s2.0-85201085676
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physleta.2024.129760
dc.identifier.urihttps://hdl.handle.net/20.500.12418/30336
dc.identifier.volume523
dc.identifier.wosWOS:001295570000001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysics Letters A
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectKeywords
dc.subjectBinding energy
dc.subjectPhotoionization cross-section
dc.subjectExternal electric field
dc.subjectDielectric matrix
dc.subjectCSQDs
dc.subjectICSQDs
dc.titleThe combined effects of electric field and embedded dielectric matrix on the electronic and optical properties in Ge/SiGe core/shell quantum dots and its SiGe/Ge inverted structure
dc.typeArticle

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