Central-cell corrections for hydrogenic, silicon (Si), selenium (Se), sulfur (S), and germanium (Ge) donor impurities and pressure-temperature effects on the optical properties of the GaAs/GaAlAs multi-layer quantum disk

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dc.authoridHamza, Azmi/0009-0002-8967-1603
dc.authoridEl-bakkari, Kamal/0000-0003-3649-7373
dc.contributor.authorFakkahi, A.
dc.contributor.authorBaşer, Pınar
dc.contributor.authorJaouane, M.
dc.contributor.authorSali, A.
dc.contributor.authorEd-Dahmouny, A.
dc.contributor.authorEl-Bakkari, K.
dc.contributor.authorArraoui, R.
dc.date.accessioned2024-10-26T18:07:30Z
dc.date.available2024-10-26T18:07:30Z
dc.date.issued2024
dc.departmentSivas Cumhuriyet Üniversitesi
dc.description.abstractGaAs/GaAlAs quantum dots can be doped with various impurities to modify their optoelectronic properties. Common impurities used for doping include: Hydrogenic impurity (HI), Silicon (Si), Selenium (Se), Germanium (Ge), and Sulfur (S) are common n-type dopant in GaAs-based materials. This work has investigated the effects of temperature and pressure on the refractive index changes (RICs) and optical absorption coefficients (OACs) in the multi-layer quantum disk, accounting for central cell correction. We have used the finite element method to calculate the eigenvalues and their corresponding wave-functions. These values are utilized in the computation of the OACs and RICs. Our outcomes can be summarized as follows: (i) The applied pressure induces a red-shift of the OACs peaks, and their magnitude is reduced. Similarly, temperature causes a blueshift of the OACs peaks, and their magnitude is enhanced. (ii) The presence and type of impurity lead to significant changes in both OACs and RICs.
dc.identifier.doi10.1016/j.physb.2024.415841
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85187956016
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physb.2024.415841
dc.identifier.urihttps://hdl.handle.net/20.500.12418/29541
dc.identifier.volume681
dc.identifier.wosWOS:001216342000001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCentral cell correction
dc.subjectLinear and third order nonlinear optical
dc.subjectabsorption coefficients
dc.subjectPressure
dc.subjectTemperature
dc.subjectMulti-layer quantum disk
dc.subjectFinite element method
dc.titleCentral-cell corrections for hydrogenic, silicon (Si), selenium (Se), sulfur (S), and germanium (Ge) donor impurities and pressure-temperature effects on the optical properties of the GaAs/GaAlAs multi-layer quantum disk
dc.typeArticle

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