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Effects of applied external fields on the nonlinear optical rectification, second, and third harmonic generation in a quantum well with exponentially confinement potential
(6.11.2021)
In the present study, the nonlinear optical rectification (NOR), second harmonic generation
(SHG), and third harmonic generation (THG) coefficients in GaAs/GaAlAs quantum well (QW) with
exponentially confinement potential ...
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...
Templated grain growth of Bi(Zn0.5Zr0.5)O3 modified BiScO3−PbTiO3 piezoelectric ceramics for high temperature applications
(Taylor & Francis, 2021)
2.5Bi(Zn0.5Zr0.5)O3−37.5BiScO3−60PbTiO3 (BZZ-BS-PT) ceramics were successfully textured in the [001] by templated grain growth (TGG) process using 5 vol% <001>-oriented BaTiO3 (BT) plate-like templates. The templates were ...
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.11.2021)
AlN samples have been grown on sapphire substrate using nucleation layers
(NLs) having different growth temperatures. The growth temperature of the NL
has been varied over a wide range of temperatures highlight the effects ...
Synthesis of PEGylated nanographene oxide as a nanocarrier for docetaxel drugs and anticancer activity on prostate cancer cell lines
(SAGE, 01.01.2021)
Graphene oxide (GO) has recently been considered one of the most promising carbon derivatives in nanotechnology. It has many excellent features such as tumor targeting ability, biocompatibility and low toxicity.
Therefore, ...
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)
In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates
at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ...
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.09.2021)
AlN samples have been grown on sapphire substrate using nucleation layers
(NLs) having different growth temperatures. The growth temperature of the NL
has been varied over a wide range of temperatures highlight the effects ...
A multiclass hybrid approach to estimating software vulnerability vectors and severity score
(Elsevier, 2021)
Classifying detected software vulnerabilities is an important process. However, the metric values of security vectors are manually determined by humans, which takes time and may introduce errors stemming from human nature. ...
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.08.2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF
magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...
Modeling of Schottky diode characteristic by machine learning techniques based on experimental data with wide temperature range
(18 Ekim 20)
In this study, 4 common machine learning methods have been used to model the I–V characteristic of the Au/Ni/n-GaN/undoped GaN Schottky diode. The current values of previously produced Au/Ni/n-GaN/undoped GaN Schottky diode ...