Browsing Nanoteknoloji Mühendisliği Bölümü by Title
Now showing items 10-29 of 82
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Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry
(Springer, 2022)InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the ... -
Determination of Optical Properties of MOVPE‑Grown InxGa1‑xAs/ InP Epitaxial Structures by Spectroscopic Ellipsometry
(24.08.2022)InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the ... -
Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE
(15.01.2023)In this study, we report the effect of the combination of Si-doped and undoped inter-layer transition time in the strain compensated In 0.67 Ga 0.33 As/In 0.36 Al 0.64 As quantum cascade laser (QCL) structure grown on ... -
Effect of substrate temperature on Raman study and optical properties of GeOx/ Si thin films
(14.10.2023)In this study, GeOx thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at how the temperature of the substrate affected the Raman spectra and optical characteristics of ... -
Effect of substrate temperature on Raman study and optical properties of GeOx/ Si thin films
(14.10.2023)In this study, GeOx thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at how the temperature of the substrate affected the Raman spectra and optical characteristics of ... -
Effect of Ultrashort Laser Pulse Shape on the Dipole Spectrum of a Single Electron
(International Conference on Advances in Engineering, Architecture, Science and Technology (ICAEAST 2021)), 2021)In this study, the effects of ultrashort laser pulse shape for the laser-matter interaction have been considered. Three different pulse shapes, Gaussian, Super-Gaussian, and Cosine-Squared, are used to calculate the dipole ... -
Effects of applied external fields on the nonlinear optical rectification, second, and third harmonic generation in a quantum well with exponentially confinement potential
(6.11.2021)In the present study, the nonlinear optical rectification (NOR), second harmonic generation (SHG), and third harmonic generation (THG) coefficients in GaAs/GaAlAs quantum well (QW) with exponentially confinement potential ... -
Effects of applied external fields on the nonlinear optical rectification, second, and third-harmonic generation in an asymmetrical semi exponential quantum well
(Springer, 2022)The asymmetric potential profiles are focus of interest for researchers who study semiconductor optoelectronic devices. Therefore, in this study, the effects of structure parameters (σ and V0) and applied external ... -
Effects of Heavy Iodine Atoms and π-Expanded Conjugation on Charge Transfer Dynamics in Carboxylic Acid BODIPY Derivatives as Triplet Photosensitizers
(2022)Borondipyrromethene (BODIPY) chromophores are composed of a functional-COOH group at meso position with or without a biphenyl ring, and their compounds with heavy iodine atoms at −2, −6 positions of the BODIPY indacene ... -
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
(15.01.2023)Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ... -
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
(15.01.2023)Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ... -
Generation of Coherent Extreme Ultraviolet Radiation in an Air Gas Cell with a High Power Femtosecond Laser System
(Springer, 2021)High harmonic generation (HHG) in air medium is experimentally produced by using a state-ofthe-art high power laser system. The harmonic orders up to 35th harmonic are well observed. Optical power dependence of harmonic ... -
Generation of even and odd harmonics in the XUV region with controlling the relative delay and polarization of two-color fields
(Elsevier, 2021)We report high harmonic generation in the extreme ultraviolet (XUV) region by using two-color laser fields at the wavelengths of 800 nm and 400 nm. With a Ti: sapphire femtosecond laser at a 10 Hz repetition rate efficient ... -
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(2022)In this study, we report different SiH4 flow condition effects on crystal, surface, optical, and electrical characteristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. ... -
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(16.01.2022)teristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. Adjustment of growth kinetics is very important to control the doping. Therefore, pulsed atomic layer epitaxy ... -
High harmonic generations in GaAs/AlGaAs superlattice: Effect of electric and magnetic field
(Elsevier, 2023)In this study, we have examined the nonlinear optical rectification (NOR), the second harmonic generation (SHG), and the third harmonic generation (THG) coefficients of the AlxGa1-xAs/GaAs superlattice with a periodically ... -
High harmonic generations triggered by the intense laser field in GaAs/ AlxGa1-xAs honeycomb quantum well wires
(Elsevier, 2023)Under constant electric and magnetic fields, the potential profile of the honeycomb quantum well wire (HQWW) is studied for varying intense laser fields to trigger and optimize high harmonics (nonlinear optical rectification, ... -
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow rate has been changed to improve the morphology and ... -
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow rate has been changed to improve the morphology and ... -
In-situ and ex-situ face-to-face annealing of epitaxial AlN
(2022)AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE). The changes in the film structure have been investigated by applying different annealing processes which are exsitu ...