Browsing Nanoteknoloji Mühendisliği Bölümü by Access Type "info:eu-repo/semantics/closedAccess"
Now showing items 1-19 of 19
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Close oxygen coupled low-pressure chemical vapor deposition growth of high quality β-Ga2O3 on sapphire
(2022)We report on the close oxygen coupled low-pressure chemical vapor deposition (COC-LPCVD) hetero-epitaxial growth of atomically smooth (− 201) oriented β− Ga2O3 on c-plane sapphire. Utilizing a dedicated line within the ... -
Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry
(Springer, 2022)InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the ... -
Effects of applied external fields on the nonlinear optical rectification, second, and third-harmonic generation in an asymmetrical semi exponential quantum well
(Springer, 2022)The asymmetric potential profiles are focus of interest for researchers who study semiconductor optoelectronic devices. Therefore, in this study, the effects of structure parameters (σ and V0) and applied external ... -
Effects of Heavy Iodine Atoms and π-Expanded Conjugation on Charge Transfer Dynamics in Carboxylic Acid BODIPY Derivatives as Triplet Photosensitizers
(2022)Borondipyrromethene (BODIPY) chromophores are composed of a functional-COOH group at meso position with or without a biphenyl ring, and their compounds with heavy iodine atoms at −2, −6 positions of the BODIPY indacene ... -
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(2022)In this study, we report different SiH4 flow condition effects on crystal, surface, optical, and electrical characteristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. ... -
In-situ and ex-situ face-to-face annealing of epitaxial AlN
(2022)AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE). The changes in the film structure have been investigated by applying different annealing processes which are exsitu ... -
In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN.
(2022)The impact of thermal surface cleaning on epitaxial AlN thin films grown on sapphire is investigated in this study at various temperatures. The sapphire substrate is cleaned in a hydrogen environment. Structural, optical, ... -
Influence of structural variables and external perturbations on the nonlinear optical rectification, second, and third-harmonic generation in the InP/InGaAs triple quantum well structure
(Springer, 2023)The InP/InGaAs triple quantum well (TQW) structure is of significant interest to researchers studying new generations of semiconductor optoelectronic devices, as it offers valuable opportunities for controlling and enhancing ... -
Interband transitions and exciton binding energy in a Razavy quantum well: effects of external fields and Razavy potential parameters
(Springer, 2022)In this paper, we theoretically investigated the influence of externally applied fields such as high-frequency non-resonant intense laser fields, static electric and magnetic fields, as well as structure parameters, on ... -
Investigation of optical and structural properties of tin-doped copper oxide thin films prepared by the drop-cast method
(Springer, 2022)Tin-doped copper oxide (Sn:CuO) thin films produced by using the sol–gel drop-cast technique were examined and the effect of Sn doping concentration on the optical properties and the energy band gap of Sn:CuO thin films ... -
Nonlinear optical properties in AlxGa1-xAs/GaAs double-graded quantum wells: The effect of the structure parameter, static electric, and magnetic field
(Elsevier, 2022)We present a theoretical simulation of the impact of applied external electric and magnetic fields, as well as of the change in structure parameters, on the nonlinear optical rectification (NOR), second harmonic ... -
Optical and nano-mechanical characterization of c-axis oriented AlN film
(2022)This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy (MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic ellipsometry. ... -
Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers
(2022)Achieving high threshold current density and high optical confinement are big challenges in the realization of high-performance aluminum gallium nitride (AlGaN)-based deep-ultraviolet (DUV) laser diode (LD). In this work, ... -
Sensitivity of indium molar fraction in InGaN quantum wells for near-UV light-emitting diodes
(2022)InGaN-based quantum wells (QWs) have higher threading dislocation density (TDD) in InGaN Light-emitting diode (LED). Despite of higher TDD, variation of Indium (In) molar fraction in the QW generate localized excitons ... -
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
(2022)AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is used as surfactant to improve ... -
The nonlinear optical rectification, second and third harmonic generation coefficients of Konwent potential quantum wells
(Springer, 2022)We have theoretically investigated the effect of structure parameters and applied external fields on the Ga1−xAlxAs/GaAs Konwent quantum well structure. Results of theoretical simulation have clarified the impact of applied ... -
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
(2022)The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted ... -
Yakın Kızıl Ötesi Spektrumu Sogurucu Optik Filtre Gelistirilmesi
(TUBITAK, 2023)Güneş ısısını soğuran ve birçok optik uygulama için yakın kızılötesi (NIR) soğuruculuğu olan materyallerin geliştirilmesi güneş enerjisi uygulamaları yanında 1064 nm dalgaboylu lazer ışınını soğurması niteliği ile savunma ... -
ystematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
(2022)Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution X-ray ...