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ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.08.2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF
magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.07.2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF
magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...
Numerical simulation of linear and nonlinear optical properties in heterostructure based on triple Gaussian quantum wells: effects of applied external fields and structural parameters
(26.07.2021)
In this work, we present a theoretical simulation of the impact of applied external
fields and structural parameters on the total (linear plus nonlinear) optical absorption
coefficient (TOAC) and total refractive relative ...
Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential
(15.11.2021)
We are presenting a theoretical investigation on the effects of applied electric,
magnetic, and non-resonant intense laser field on the coefficients of intersubband linear,
third-order nonlinear, and total optical ...
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)
at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and
silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were ...
Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
(07.06.2021)
Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate
InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640°C are investigated. While
all other sources ...
Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry
(Springer, 2022)
InxGa1−xAs epitaxial layers with different AsH3
flows have been grown on InP substrate with the MOVPE system. It has
been found that AsH3
flow variation affects the In concentration of InGaAs/InP structure because the ...
The nonlinear optical rectification, second and third harmonic generation coefficients of Konwent potential quantum wells
(Springer, 2022)
We have theoretically investigated the effect of structure parameters and applied external fields on the Ga1−xAlxAs/GaAs
Konwent quantum well structure. Results of theoretical simulation have clarified the impact of applied ...
Effects of applied external fields on the nonlinear optical rectification, second, and third-harmonic generation in an asymmetrical semi exponential quantum well
(Springer, 2022)
The asymmetric potential profiles are focus of interest for researchers who study semiconductor
optoelectronic devices. Therefore, in this study, the effects of structure parameters
(σ and V0)
and applied external ...
Nonlinear optical properties in AlxGa1-xAs/GaAs double-graded quantum wells: The effect of the structure parameter, static electric, and magnetic field
(Elsevier, 2022)
We present a theoretical simulation of the impact of applied external electric and magnetic fields, as well as of
the change in structure parameters, on the nonlinear optical rectification (NOR), second harmonic ...