Browsing Nanoteknoloji Mühendisliği Bölümü Makale Koleksiyonu by Issue Date
Now showing items 21-40 of 75
-
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(16.01.2022)teristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. Adjustment of growth kinetics is very important to control the doping. Therefore, pulsed atomic layer epitaxy ... -
Optical and nano-mechanical characterization of c-axis oriented AlN film
(19.05.2022)This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy (MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic ellipsometry. ... -
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.09.2021)AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects ... -
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.11.2021)AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects ... -
Nanoparticles with PDT and PTT synergistic properties working with dual NIR-light source simultaneously
(2021)A non-toxic nano system using a cleverly designed dual light can be an important treatment strategy in cancer therapy. Here, we propose a unique concept of synergistic non-toxic nanoplatform, which operates with dual ... -
Generation of Coherent Extreme Ultraviolet Radiation in an Air Gas Cell with a High Power Femtosecond Laser System
(Springer, 2021)High harmonic generation (HHG) in air medium is experimentally produced by using a state-ofthe-art high power laser system. The harmonic orders up to 35th harmonic are well observed. Optical power dependence of harmonic ... -
Generation of even and odd harmonics in the XUV region with controlling the relative delay and polarization of two-color fields
(Elsevier, 2021)We report high harmonic generation in the extreme ultraviolet (XUV) region by using two-color laser fields at the wavelengths of 800 nm and 400 nm. With a Ti: sapphire femtosecond laser at a 10 Hz repetition rate efficient ... -
Intensity-dependent nonlinear optical properties in an asymmetric Gaussian potential quantum well-modulated by external fields
(Springer, 2021)In this paper, the efects of external electric, magnetic and non-resonant intense laser felds on the nonlinear optical rectifcation (NOR), second-harmonic (SH), and third harmonic (TH) generation in a GaAs quantum well ... -
Influence of hydrostatic pressure, temperature, and terahertz laser field on the electron-related optical responses in an asymmetric double quantum well
(Springer, 2021)In this study, the effects of hydrostatic pressure, temperature, and high-frequency intense laser field on the nonlinear optical properties of an asymmetric GaAs/AlGaAs double quantum well was theoretically investigated. ... -
Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry
(Springer, 2022)InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the ... -
The nonlinear optical rectification, second and third harmonic generation coefficients of Konwent potential quantum wells
(Springer, 2022)We have theoretically investigated the effect of structure parameters and applied external fields on the Ga1−xAlxAs/GaAs Konwent quantum well structure. Results of theoretical simulation have clarified the impact of applied ... -
Effects of applied external fields on the nonlinear optical rectification, second, and third-harmonic generation in an asymmetrical semi exponential quantum well
(Springer, 2022)The asymmetric potential profiles are focus of interest for researchers who study semiconductor optoelectronic devices. Therefore, in this study, the effects of structure parameters (σ and V0) and applied external ... -
Nonlinear optical properties in AlxGa1-xAs/GaAs double-graded quantum wells: The effect of the structure parameter, static electric, and magnetic field
(Elsevier, 2022)We present a theoretical simulation of the impact of applied external electric and magnetic fields, as well as of the change in structure parameters, on the nonlinear optical rectification (NOR), second harmonic ... -
Interband transitions and exciton binding energy in a Razavy quantum well: effects of external fields and Razavy potential parameters
(Springer, 2022)In this paper, we theoretically investigated the influence of externally applied fields such as high-frequency non-resonant intense laser fields, static electric and magnetic fields, as well as structure parameters, on ... -
Investigation of optical and structural properties of tin-doped copper oxide thin films prepared by the drop-cast method
(Springer, 2022)Tin-doped copper oxide (Sn:CuO) thin films produced by using the sol–gel drop-cast technique were examined and the effect of Sn doping concentration on the optical properties and the energy band gap of Sn:CuO thin films ... -
Molecularly imprinted composite discs for transferrin recognition
(Taylor and Francis, 2022)Human Transferrin (HTr) imprinted composite cryogel (HTr-MIPCC) discs were synthesized with distinctive structure and increased adsorption capacity and specificity for HTr by combining the advantages of the surface ... -
Optical and nano-mechanical characterization of c-axis oriented AlN film
(2022)This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy (MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic ellipsometry. ... -
ystematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
(2022)Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution X-ray ... -
Sensitivity of indium molar fraction in InGaN quantum wells for near-UV light-emitting diodes
(2022)InGaN-based quantum wells (QWs) have higher threading dislocation density (TDD) in InGaN Light-emitting diode (LED). Despite of higher TDD, variation of Indium (In) molar fraction in the QW generate localized excitons ... -
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
(2022)AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is used as surfactant to improve ...