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Binding energy of excitons in symmetric and asymmetric coupled double quantum wells in a uniform magnetic field
(IOP PUBLISHING LTD, 2000)
The binding energy of excitons in symmetric and asymmetric coupled double GaAs/Ga1-xAlxAs quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic ...
Electric field dependence of the excitonic properties in graded double quantum wells
(IOP PUBLISHING LTD, 1999)
A quasi-bound state approximation is used to obtain the electric field dependence of the eigenvalues, eigenfunctions, electron-hole overlap integrals and excitonic binding energies for coupled, graded double quantum wells ...
Electric field and intense laser field effects on the intersubband optical absorption in a graded quantum well
(IOP PUBLISHING LTD, 2005)
The laser field dependence of the intersubband optical absorption in a graded quantum well (GQW), under an applied electric field is calculated in the effective mass approximation. We have theoretically shown that, in the ...
Exciton absorption in quantum-well wires under the electric field
(ELSEVIER SCIENCE BV, 2003)
The binding energy of excitons, and interband optical absorption in quantum-well wires of GaAs surrounded by Ga1-xAlxAs is calculated in effective-mass approximation, using a variational approach. Results obtained show ...
Binding energies of shallow donor impurities in different shaped quantum wells under an applied electric field
(ELSEVIER SCIENCE BV, 2003)
We present a variational method to compute the binding energies for a hydrogenic impurity located at the center of the finite parabolic (PQW), V-shaped (VQW or full graded well) and square (SQW) GaAs-Ga1-xAlxAs quantum ...
The effects of hydrostatic pressure and applied electric field on shallow donor impurities in GaAs/GaAlAs graded quantum well
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2005)
Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs ...
Electronic properties of two coupled Si delta-doped GaAs structures
(E D P SCIENCES, 2003)
We have theoretically investigated the subband structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The ...
Intersubband optical absorption in a quantum well under a tilted magnetic field
(ACADEMIC PRESS LTD, 2001)
By using an appropriate coordinate transform we have calculated the intersubband optical absorption in the single square well under a tilted magnetic field. In this study the dependence of the intersubband transitions on ...
Intersubband transitions in quantum wells under intense laser field
(SPRINGER, 2005)
An intense laser field effect on the intersubband transitions in quantum wells is theoretically investigated within the framework of the effective-mass approximation. Results obtained show that intersubbband optical ...
Excitonic structure in a quantum well under the tilted magnetic field
(AMER INST PHYSICS, 2000)
By using an appropriate coordinate transform we have calculated variationally the ground state exciton binding energy in the single square well under the tilted magnetic field. The dependence of the binding energy to the ...